20/09/2010
Sleep After Mobile Phone Exposure in Subjects With Mobile Phone-Related Symptoms
Arne Lowden, Torbjörnkerstedt, Michael Ingre, Clairy Wiholm, Lena Hillert, Niels Kuster, Jens P Nilsson, and Bengt Arnetz, in Bioelectromagnetics, Volume 32, Issue 1, pp. 4–14, online September 20, 2010
Several studies show increases in activity for certain frequency bands (10 – 14 Hz) and visually scored parameters during sleep after exposure to radiofrequency electromagnetic fields. A shortened REM latency has also been reported. We investigated the effects of a double-blind radiofrequency exposure (884 MHz, GSM signaling standard including non-DTX and DTX mode, time-averaged 10 g psSAR of 1.4 W/kg) on self-evaluated sleepiness and objective EEG measures during sleep. Forty-eight subjects (mean age 28 years) underwent 3 h of controlled exposure (7:30 – 10:30 PM; active or sham) prior to sleep, followed by a full-night polysomnographic recording in a sleep laboratory. The results demonstrated that following exposure, time in Stages 3 and 4 sleep (SWS, slow-wave sleep) decreased by 9.5 min (12%) out of a total of 78.6 min, and time in Stage 2 sleep increased by 8.3 min (4%) out of a total of 196.3 min compared to sham. The latency to Stage 3 sleep was also prolonged by 4.8 min after exposure. Power density analysis indicated an enhanced activation in the frequency ranges 0.5–1.5 and 5.75 – 10.5 Hz during the first 30 min of Stage 2 sleep, with 7.5 – 11.75 Hz being elevated within the first hour of Stage 2 sleep, and bands 4.75 – 8.25 Hz elevated during the second hour of Stage 2 sleep. No pronounced power changes were observed in SWS or for the third hour of scored Stage 2 sleep. No differences were found between controls and subjects with prior complaints of mobile phone-related symptoms. The results confirm previous findings that RF exposure increased the EEG alpha range in the sleep EEG, and indicated moderate impairment of SWS. Furthermore, reported differences in sensitivity to mobile phone use were not reflected in sleep parameters.